The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6917071 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 12, 2005

Filed:

Jan. 21, 2003
Applicant:

Fumihiko Hayashi, Tokyo, JP;

Inventor:

Fumihiko Hayashi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/788 ;
U.S. Cl.
CPC ...
Abstract

There are provided a semiconductor device which is operable with a small occupied area, high reliability, and low power consumption, a nonvolatile semiconductor storage apparatus using the device and a manufacture method of the device. A semiconductor device of the present invention comprises a first gate insulating film, floating gate, second gate insulating film, and control gate on a semiconductor substrate, and a source area and a drain area formed in the semiconductor substrate on opposite sides of the floating gate, the floating gate comprises a first floating gate and a second floating gate disposed to cover the first floating gate, and an isolating gate is formed on the second floating gate on the side of the semiconductor substrate, and parallel to the first floating gate via an isolating insulating film


Find Patent Forward Citations

Hayashi, Fumihiko. (2005). Semiconductor device, nonvolatile semiconductor storage apparatus using the device, and manufacture method of the device (U.S. Patent No. 6917071). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6917071

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