Company Filing History:

8 out of 12,867

Advanced Micro Devices Corporation

Years Active: 2004-2011

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14 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 7995386 - Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturb (2011-08-09),

2. 7619932 - Algorithm for charge loss reduction and Vt distribution improvement (2009-11-17),

3. 7561471 - Cycling improvement using higher erase bias (2009-07-14),

4. 7319615 - Ramp gate erase for dual bit flash memory (2008-01-15),

5. 7170796 - Methods and systems for reducing the threshold voltage distribution following a memory cell erase (2007-01-30),

6. 6958272 - Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell (2005-10-25),

7. 6944057 - Method to obtain temperature independent program threshold voltage distribution using temperature dependent voltage reference (2005-09-13),

8. 6906959 - Method and system for erasing a nitride memory device (2005-06-14),

9. 6834012 - Memory device and methods of using negative gate stress to correct over-erased memory cells (2004-12-21),

10. 6822909 - Method of controlling program threshold voltage distribution of a dual cell memory device (2004-11-23),

11. 6788583 - Pre-charge method for reading a non-volatile memory cell (2004-09-07),

12. 6775187 - Method of programming a dual cell memory device (2004-08-10),

13. 6771545 - Method for reading a non-volatile memory cell adjacent to an inactive region of a non-volatile memory cell array (2004-08-03),

14. 6735114 - Method of improving dynamic reference tracking for flash memory unit (2004-05-11),

Title: The Innovations of Edward Franklin Runnion

Introduction

Edward Franklin Runnion is a notable inventor based in Santa Clara, California. He has made significant contributions to the field of memory technology, holding a total of 14 patents. His work focuses on enhancing the performance and reliability of memory devices, particularly in reducing charge loss and improving data integrity.

Latest Patents

Runnion's latest patents include innovative methods for applying negative gate voltage to wordlines adjacent to a selected wordline during read or verify operations. This technology aims to reduce adjacent wordline disturb, thereby maintaining a desired operation window and minimizing voltage threshold shifts. Another significant patent involves algorithms for charge loss reduction and threshold voltage distribution improvement in memory cells. This method is particularly beneficial for multi-level flash memory cells, as it enhances data reliability while programming or erasing memory cells.

Career Highlights

Throughout his career, Runnion has worked with prominent companies in the technology sector, including Advanced Micro Devices Corporation and Spansion LLC. His expertise in memory technology has positioned him as a key contributor to advancements in this field.

Collaborations

Runnion has collaborated with notable professionals such as Mark W. Randolph and Yi He, further enriching his contributions to the industry.

Conclusion

Edward Franklin Runnion's innovative work in memory technology has led to significant advancements that enhance the performance and reliability of memory devices. His contributions continue to impact the field positively.

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