The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Nov. 27, 2002
Mark W. Randolph, San Jose, CA (US);
Chi Chang, Redwood City, CA (US);
Yi He, Sunnyvale, CA (US);
Wei Zheng, Santa Clara, CA (US);
Edward F. Runnion, Santa Clara, CA (US);
Zhizheng Liu, Sunnyvale, CA (US);
Mark W. Randolph, San Jose, CA (US);
Chi Chang, Redwood City, CA (US);
Yi He, Sunnyvale, CA (US);
Wei Zheng, Santa Clara, CA (US);
Edward F. Runnion, Santa Clara, CA (US);
Zhizheng Liu, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The present invention is a method and system for erasing a nitride memory device. In one embodiment of the present invention, an isolated P-well is formed in a semiconductor substrate. A plurality of N-type impurity concentrations are formed in the isolated P-well and a nitride memory cell is fabricated between two of the N-type impurity concentrations. Finally, an electrical contact is coupled to the isolated P-well.