The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
May. 06, 2003
Edward F. Runnion, Santa Clara, CA (US);
Tien-chun Yang, San Jose, CA (US);
Binh Quang Le, San Jose, CA (US);
Shigekazu Yamada, Cupertino, CA (US);
Darlene G. Hamilton, San Jose, CA (US);
Ming-huei Shieh, Cupertino, CA (US);
Pau-ling Chen, Saratoga, CA (US);
Kazuhiro Kurihara, Tokyo, JP;
Edward F. Runnion, Santa Clara, CA (US);
Tien-Chun Yang, San Jose, CA (US);
Binh Quang Le, San Jose, CA (US);
Shigekazu Yamada, Cupertino, CA (US);
Darlene G. Hamilton, San Jose, CA (US);
Ming-Huei Shieh, Cupertino, CA (US);
Pau-Ling Chen, Saratoga, CA (US);
Kazuhiro Kurihara, Tokyo, JP;
FASL LLC, Sunnyvale, CA (US);
Abstract
A method for controlling gate voltage in a memory device is described. The method includes providing a circuit that is adapted to be coupled with the memory device. The circuit is for generating a reference voltage. The method further includes utilizing the reference voltage provided by the circuit to apply a voltage at a gate of the memory device. The voltage has a value corresponding to a temperature of the memory device. The method also includes retaining a proportional relationship between the reference voltage and the temperature of the memory device, regardless of the change in the temperature of the memory device. The reference voltage provides a substantially constant programming time for the memory device regardless of the temperature of the memory device.