The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2004

Filed:

Apr. 24, 2003
Applicant:
Inventors:

Darlene G. Hamilton, San Jose, CA (US);

Edward Hsia, Saratoga, CA (US);

Mark W. Randolph, San Jose, CA (US);

Edward F. Runnion, Santa Clara, CA (US);

Kulachet Tanpairoj, Palo Alto, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/134 ;
U.S. Cl.
CPC ...
G11C 1/134 ;
Abstract

A method of programming a dual cell memory device having a first charge storing cell and a second charge storing cell. The method can include applying an initial program pulse to the memory device; comparing the threshold voltage of the memory device with a verify threshold voltage; and if the threshold voltage of the memory device is less than the verify threshold voltage, applying a second program pulse to the memory device during which at least one condition of the second program pulse is modified from the initial program pulse.


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