The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2008

Filed:

Aug. 02, 2006
Applicants:

Sheung-hee Park, Pleasanton, CA (US);

Gwyn Jones, Sunnyvale, CA (US);

Wing Leung, Palo Alto, CA (US);

Edward Franklin Runnion, Santa Clara, CA (US);

Ming-sang Kwan, San Leandro, CA (US);

Xuguang Wang, Sunnyvale, CA (US);

Yi He, Fremont, CA (US);

Inventors:

Sheung-Hee Park, Pleasanton, CA (US);

Gwyn Jones, Sunnyvale, CA (US);

Wing Leung, Palo Alto, CA (US);

Edward Franklin Runnion, Santa Clara, CA (US);

Ming-Sang Kwan, San Leandro, CA (US);

Xuguang Wang, Sunnyvale, CA (US);

Yi He, Fremont, CA (US);

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of erasing a block of flash memory cells by applying a ramped gate erase voltage to the block of memory cells. When an erase verify of the block of memory cells indicates that erasure has not been successfully completed another erase voltage with a greater absolute value than the initial erase voltage can be applied to the block of memory cells until erasure is complete.


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