Company Filing History:

7 out of 1,075

Spansion Llc.

patents

4 out of 12,867

Advanced Micro Devices Corporation

patents

Years Active: 2002-2011

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11 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 7952938 - Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory (2011-05-31),

2. 7746705 - Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory (2010-06-29),

3. 7599228 - Flash memory device having increased over-erase correction efficiency and robustness against device variations (2009-10-06),

4. 7561471 - Cycling improvement using higher erase bias (2009-07-14),

5. 7385851 - Repetitive erase verify technique for flash memory devices (2008-06-10),

6. 7319615 - Ramp gate erase for dual bit flash memory (2008-01-15),

7. 7142455 - Positive gate stress during erase to improve retention in multi-level, non-volatile flash memory (2006-11-28),

8. 7020021 - Ramped soft programming for control of erase voltage distributions in flash memory devices (2006-03-28),

9. 6950344 - Reading flash memory (2005-09-27),

10. 6754109 - Method of programming memory cells (2004-06-22),

11. 6469939 - Flash memory device with increase of efficiency during an APDE (automatic program disturb after erase) process (2002-10-22),

Title: Sheung-Hee Park: Innovator in Nonvolatile Memory Technology

Introduction

Sheung-Hee Park is a prominent inventor based in Pleasanton, CA (US). She has made significant contributions to the field of nonvolatile memory technology, holding a total of 11 patents. Her innovative work focuses on optimizing memory devices to enhance performance and efficiency.

Latest Patents

One of her latest patents is titled "Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory." This patent presents a memory device that includes an optimization component designed to facilitate the erasure of memory cells in a substantially homogeneous electromagnetic field. The optimization component allows for the selection of a subset of memory cells to be erased simultaneously, ensuring that adjacent memory cells are also part of the subset. This method employs a Fowler-Nordheim channel erase technique, applying a predetermined voltage potential to each cell to reduce fringing effects associated with the electromagnetic fields during the erase process.

Career Highlights

Throughout her career, Sheung-Hee Park has worked with notable companies such as Spansion LLC and Advanced Micro Devices Corporation. Her experience in these organizations has contributed to her expertise in memory technology and innovation.

Collaborations

She has collaborated with several professionals in her field, including Richard M. Fastow and Wing Leung. These collaborations have further enriched her work and expanded her impact on the industry.

Conclusion

Sheung-Hee Park is a trailblazer in the realm of nonvolatile memory technology, with a strong portfolio of patents and a history of collaboration with industry leaders. Her contributions continue to shape the future of memory devices and their applications.

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