The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Nov. 01, 2004
Qiang LU, San Mateo, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Kazuhiro Mizutani, Sunnyvale, CA (US);
Sung-chul Lee, Cupertino, CA (US);
Sheung-hee Park, Pleasanton, CA (US);
Ming-sang Kwan, San Leandro, CA (US);
Qiang Lu, San Mateo, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Kazuhiro Mizutani, Sunnyvale, CA (US);
Sung-Chul Lee, Cupertino, CA (US);
Sheung-Hee Park, Pleasanton, CA (US);
Ming-Sang Kwan, San Leandro, CA (US);
Spansion L.L.C., Sunnyvale, CA (US);
Abstract
A memory device is provided including circuitry for correcting an over-erased memory cell in the memory device. The memory device may include a substrate. A control gate and a floating gate may be formed over the substrate. The memory device may include a source region and a drain region. A first resistive element may be coupled between the source region and the control gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile