The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Aug. 01, 2005
Yi He, Fremont, CA (US);
Gwyn Jones, Sunnyvale, CA (US);
Edward F. Runnion, Santa Clara, CA (US);
Mark Randolph, San Jose, CA (US);
Yi He, Fremont, CA (US);
Gwyn Jones, Sunnyvale, CA (US);
Edward F. Runnion, Santa Clara, CA (US);
Mark Randolph, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method is provided for erasing a memory device including a number of memory cells, the memory cells including a substrate, a control gate, a charge storage element, a source region and a drain region. The method includes erasing a group of memory cells to lower a maximum threshold voltage of the group of memory cells below a first predetermined level. The group of memory cells is soft-programmed to raise a minimum threshold voltage of the group of memory cells above a second predetermined level. The group of memory cells is erased, following soft-programming, resulting in a reduced threshold voltage distribution associated with the group of memory cells.