The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Jun. 08, 2004
Applicant:
Inventors:
Yi He, Fremont, CA (US);
Edward Franklin Runnion, Santa Clara, CA (US);
Zhizheng Liu, Sunnyvale, CA (US);
Zengtao Liu, Sunnyvale, CA (US);
Mark William Randolph, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ; G11C 1/606 ;
U.S. Cl.
CPC ...
G11C 1/604 ; G11C 1/606 ;
Abstract
Methods of operating dual bit flash memory devices and correcting over-erased dual bit flash memory devices are provided. The present invention includes a corrective action that employs a negative gate to correct over-erased memory cells without substantially altering threshold voltage values or charge states for properly erased memory cells. The negative gate stress is performed as a block operation by applying a negative gate voltage to gates and connecting active regions and a substrate to ground.