Sunnyvale, CA, United States of America

Zengtao Liu

This inventor holds 7 USPTO granted patents and 1 published patent application. Top assignees: Cornell University, Advanced Micro Devices Corporation, Spansion LLC.. Active years: 2003-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zengtao Liu. Retrieved from https://idiyas.com/inventor/zengtao-liu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 85.7

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 149(Granted Patents)


Location History:

  • Ithaca, NY (US) (2003 - 2004)
  • Sunnyvale, CA (US) (2004 - 2007)

Company Filing History:


Years Active: 2003-2007

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7 patents (USPTO):Explore Patents

Title: Zengtao Liu: Innovator in Nanocrystal Memory Technology

Introduction

Zengtao Liu is a prominent inventor based in Sunnyvale, CA (US), known for his significant contributions to the field of nanocrystal memory technology. With a total of 7 patents, Liu has been at the forefront of developing advanced memory solutions that enhance data storage capabilities.

Latest Patents

Liu's latest patents include groundbreaking work on multibit metal nanocrystal memories and fabrication techniques. These metal nanocrystal memories are designed to achieve higher density states, stronger coupling with the channel, and improved size scalability compared to traditional semiconductor nanocrystal devices. His innovative approach involves a self-assembled nanocrystal formation process through rapid thermal annealing of ultra-thin metal films deposited on gate oxides, integrated with NMOSFET technology. The devices utilizing gold (Au), silver (Ag), and platinum (Pt) nanocrystals operate in the Fowler-Nordheim (F-N) tunneling regime, employing hot-carrier injection as the programming mechanism. This results in impressive retention times of up to 10 seconds and a 2-bit-per-cell storage capability.

Another notable patent focuses on flash memory cells, which consist of a dielectric material above a substrate channel region, a charge trapping material over the dielectric, and a control gate on top. The programming of these cells is achieved by directing electrons from the control gate into the charge trapping material, effectively raising the cell's threshold voltage. Conversely, the erasing process involves directing electrons back to the control gate, lowering the threshold voltage. This innovative design enhances the efficiency and functionality of flash memory technology.

Career Highlights

Throughout his career, Zengtao Liu has worked with esteemed organizations such as the Cornell Research Foundation Inc. and Advanced Micro Devices Corporation. His experience in these companies has allowed him to refine his expertise in memory technology and contribute to significant advancements in the field.

Collaborations

Liu has collaborated with notable colleagues, including Yi He and Zhizheng Liu, further enriching his research and development efforts in nanocrystal memory technology.

Conclusion

Zengtao Liu's innovative work in nanocrystal memory technology has positioned him as a leading inventor in the field. His contributions continue to influence advancements in data storage solutions, showcasing the importance of his research and patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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