The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Jun. 09, 2004
Zengtao Liu, Sunnyvale, CA (US);
Zhizheng Liu, Sunnyvale, CA (US);
Yi He, Fremont, CA (US);
Sameer Haddad, San Jose, CA (US);
Mark Randolph, San Jose, CA (US);
Zengtao Liu, Sunnyvale, CA (US);
Zhizheng Liu, Sunnyvale, CA (US);
Yi He, Fremont, CA (US);
Sameer Haddad, San Jose, CA (US);
Mark Randolph, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Methods of operating dual bit memory devices including programming with a range of values are provided. The present invention employs a range of ramp source program pulses to iteratively perform a program operation that employs hot hole injection. The range is related to channel lengths of individual dual bit memory cells within the memory device. To program a bit of a particular dual bit memory cell, a negative gate program voltage is applied to its gate, a positive drain voltage is applied to its acting drain, and its substrate is connected to ground. Additionally, a ramp source voltage of the range of ramp source program pulses is concurrently applied to an acting source of the dual bit memory cell. A verification operation is then performed and the programming is repeated with a decremented ramp source voltage on verification failure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile