Bend, OR, United States of America

Dumitru Sdrulla

USPTO Granted Patents = 15 

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 258(Granted Patents)


Company Filing History:


Years Active: 1996-2021

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15 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Dumitru Sdrulla

Introduction

Dumitru Sdrulla is a notable inventor based in Bend, Oregon, recognized for his significant contributions to semiconductor technology. With a total of 15 patents to his name, Sdrulla has made remarkable advancements in high-voltage terminations and power transistor assemblies.

Latest Patents

One of his latest patents is titled "Space efficient high-voltage termination and process for fabricating same." This invention involves a high-voltage termination for a semiconductor device, which includes a substrate of a first conductivity type, an implanted device region of a second conductivity type, and a shallow trench disposed in the substrate. The design aims to enhance the efficiency and reliability of semiconductor devices. Another significant patent is "Method and assembly for mitigating short channel effects in silicon carbide MOSFET devices." This invention provides a power transistor assembly and method to mitigate short channel effects, improving the performance of power transistors.

Career Highlights

Throughout his career, Dumitru Sdrulla has worked with prominent companies such as Microsemi Corporation and Advanced Power Technology Corporation. His work in these organizations has contributed to the development of cutting-edge technologies in the semiconductor industry.

Collaborations

Sdrulla has collaborated with notable professionals in his field, including Bruce Odekirk and Marc H. Vandenberg. These collaborations have further enriched his innovative endeavors and expanded the impact of his inventions.

Conclusion

Dumitru Sdrulla's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in high-voltage terminations and power transistor assemblies.

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