The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Aug. 15, 2018
Applicant:
Microsemi Corporation, Aliso Viejo, CA (US);
Inventors:
Amaury Gendron-Hansen, Bend, OR (US);
Bruce Odekirk, Bend, OR (US);
Nathaniel Berliner, Bend, OR (US);
Dumitru Sdrulla, Bend, OR (US);
Assignee:
Microsemi Corporation, Chandler, AZ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/45 (2006.01); H01L 21/04 (2006.01); H01L 29/861 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0603 (2013.01); H01L 21/0214 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/046 (2013.01); H01L 21/0495 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/6606 (2013.01); H01L 29/66128 (2013.01); H01L 29/66136 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01); H01L 29/20 (2013.01);
Abstract
A semiconductor device constituted of: a semiconductor layer; and a field layer patterned on said semiconductor layer, said field layer constituted of material having characteristics which block diffusion of mobile ions and maintain structural integrity at activation temperatures of up to 1200 degrees centigrade.