The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Nov. 05, 2018
Microsemi Corporation, Aliso Viejo, CA (US);
Dumitru Gheorge Sdrulla, Bend, OR (US);
Avinash Srikrishnan Kashyap, Portland, OR (US);
Microsemi Corporation, Chandler, AZ (US);
Abstract
A power transistor assembly and method of mitigating short channel effects in a power transistor assembly are provided. The power transistor assembly includes a first layer of semiconductor material formed of a first conductivity type material and a hard mask layer covering at least a portion of the first layer and having a window therethrough exposing a surface of the first layer. The power transistor assembly also includes a first region formed in the first layer of semiconductor material of a second conductivity type material and aligned with the window, one or more source regions formed of first conductivity type material within the first region and separated by a portion of the first region, and an extension of the first region extending laterally through the surface of the first layer.