For the Inventor, By the Inventor

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Bend, OR, United States of America

Advanced Power Technology Corporation

USPTO Granted Patents = 22

% Expired Patents = 9.1

EPO Patents = 1

Trademarks = 1

Forward Citations = 904

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21 inventors (with patents filed for the assignee):

Douglas A Pike, Jr (9 out of 9 patents)

Dah W Tsang (8 out of 9 patents)

Theodore G Hollinger (7 out of 11 patents)

4. Theodore O Meyer (7 out of 7 patents)

5. John W Mosier, Ii (5 out of 5 patents)

6. Dumitru Sdrulla (3 out of 15 patents)

7. James M Katana (3 out of 4 patents)

8. Stanley J Klodzinski (2 out of 2 patents)

9. Yoshihiko Yamaguchi (1 out of 7 patents)

10. Makoto Ohashi (1 out of 13 patents)

11. Masayuki Suetomi (1 out of 7 patents)

12. Tatsumi Yamamoto (1 out of 1 patent)

13. Richard B Frey (1 out of 4 patents)

14. Shanqi Zhao (1 out of 2 patents)

15. James D Parsons (1 out of 7 patents)

22 patents: Sort by Forward Citations

1. 10643783 - Transformer and DC-DC converter (2020-05-05),

2. 7169634 - Design and fabrication of rugged FRED (2007-01-30),

3. 6939743 - Split-gate power module and method for suppressing oscillation therein (2005-09-06),

4. 6911714 - Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates (2005-06-28),

5. 6664594 - Power MOS device with asymmetrical channel structure for enhanced linear operation capability (2003-12-16),

6. 6503786 - Power MOS device with asymmetrical channel structure for enhanced linear operation capability (2003-01-07),

7. 5801417 - Self-aligned power MOSFET device with recessed gate and source (1998-09-01),

8. 5648283 - High density power device fabrication process using undercut oxide (1997-07-15),

9. 5528058 - IGBT device with platinum lifetime control and reduced gaw (1996-06-18),

10. 5423183 - Hydraulic machine with wedge-shaped swashplate (1995-06-13),

11. 5283202 - IGBT device with platinum lifetime control having gradient or profile (1994-02-01),

12. 5283201 - High density power device fabrication process (1994-02-01),

13. 5262336 - IGBT process to produce platinum lifetime control (1993-11-16),

14. 5256583 - Mask surrogate semiconductor process with polysilicon gate protection (1993-10-26),

15. 5250904 - Device for predicting imminent failure of a stationary lead acid battery (1993-10-05),

Company Overview

Advanced Power Technology Corporation, based in Bend, Oregon, specializes in the development and manufacturing of high-performance power semiconductor devices. The company focuses on innovative solutions for various applications, including telecommunications, industrial automation, and consumer electronics. With a commitment to advancing power management technologies, Advanced Power Technology plays a significant role in enhancing energy efficiency and reliability across multiple sectors, contributing to the evolution of modern electronic systems.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

22 Patents

#7 in Bend, OR

#156 in Oregon

#15,021 in US

#28,749 in the World

Bend, OR, United States of America

Advanced Power Technology Corporation

Forward Citations = 904

21 inventors:

Douglas A Pike, Jr (9 out of 9 patents)

Dah W Tsang (8 out of 9 patents)

Theodore G Hollinger (7 out of 11 patents)

4. Theodore O Meyer (7 out of 7 patents)

5. John W Mosier, Ii (5 out of 5 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Advanced Power Technology Corporation. Retrieved from https://idiyas.com/company/advanced-power-technology

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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