Company Filing History:
Years Active: 2003
Title: Innovations by Stanley J Klodzinski
Introduction
Stanley J Klodzinski is a notable inventor based in Bend, Oregon. He has made significant contributions to the field of power electronics, particularly through his innovative designs in power MOS devices. With a total of two patents to his name, Klodzinski's work focuses on enhancing the performance and efficiency of electronic devices.
Latest Patents
Klodzinski's latest patents include a groundbreaking design for a power MOS device with an asymmetrical channel structure. This device is engineered to improve linear operation capability by producing different gate threshold voltage characteristics in various parts of the device. The innovation can be achieved through varying source region doping concentrations, body region doping concentrations, or asymmetrical gate oxide thicknesses. This design allows for a portion of the overall channel to be affected, which can be adjusted to optimize the device's performance. The result is a reduction in the zero temperature coefficient point and an improvement in the Safe Operating Area during linear operation, all while maintaining low conduction loss. Additionally, multiple power MOSFET devices with asymmetrical channels can be safely utilized in parallel linear power amplifier circuits.
Career Highlights
Stanley J Klodzinski is currently associated with Advanced Power Technology Corporation, where he continues to develop innovative solutions in power electronics. His expertise and contributions have positioned him as a key figure in the advancement of power MOS technology.
Conclusion
Stanley J Klodzinski's work exemplifies the spirit of innovation in the field of electronics. His patents reflect a commitment to enhancing device performance and efficiency, making a lasting impact on the industry.