Company Filing History:
Years Active: 1990-1998
Title: Innovations of Douglas A Pike, Jr.
Introduction
Douglas A Pike, Jr. is a prominent inventor based in Bend, Oregon, known for his significant contributions to power MOSFET technology. With a total of nine patents to his name, he has made remarkable advancements in the field of semiconductor devices.
Latest Patents
His latest patents include a self-aligned power MOSFET device with a recessed gate and source. This innovative design involves a substrate that includes a P-body layer, N-drain layer, and an optional P+ layer for IGBT. The process features a trenching protective layer that is patterned to define exposed areas and protected areas. Additionally, he has developed a high-density power device fabrication process using undercut oxide, which enhances the efficiency and performance of gate power MOSFETs.
Career Highlights
Douglas has worked at Advanced Power Technology Corporation, where he has played a crucial role in developing cutting-edge technologies in power devices. His expertise in semiconductor fabrication processes has positioned him as a leader in the industry.
Collaborations
He has collaborated with notable coworkers such as Dah W Tsang and Theodore O Meyer, contributing to various projects that have advanced the field of power electronics.
Conclusion
Douglas A Pike, Jr. continues to be a driving force in the innovation of power MOSFET technology, with his patents reflecting his commitment to advancing the semiconductor industry.
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