The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Nov. 01, 2001
James D. Parsons, Beaverton, OR (US);
B. Leo Kwak, Beaverton, OR (US);
James D. Parsons, Beaverton, OR (US);
B. Leo Kwak, Beaverton, OR (US);
Advanced Power Technology, Inc., Bend, OR (US);
Abstract
A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protective layer above the operating temperature (over 1000° C., preferably >1200° C.). The glass is preferably 30-50% BO/70-50% SiO, formed by reacting a mixed powder, slurry or paste of the components at 460°-1000° C. preferably about 700° C. The die can be mounted on the ceramic substrate using the BSG as an adhesive. Metal conductors on the ceramic substrate are also protected by the BSG. The preferred ceramic substrate is AlN but SiC/AlN or AlOcan be used.