Company Filing History:
Years Active: 1996-2008
Title: Innovations of James D Parsons
Introduction
James D Parsons is a notable inventor based in Beaverton, Oregon. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work primarily focuses on the adhesion and encapsulation of silicon carbide-based semiconductor devices.
Latest Patents
One of his latest patents involves the encapsulation of silicon carbide (SiC) dies with various metal contacts on ceramic substrates. This innovative process utilizes a borosilicate glass that is formed at temperatures well below the upper operating limits of the devices. The glass serves as a stable protective layer, capable of withstanding temperatures exceeding 1000°C, and preferably above 1200°C. The composition of the glass is ideally 30-50% boron oxide and 70-50% silicon dioxide, created by reacting a mixed powder, slurry, or paste of the components at temperatures ranging from 460°C to 1000°C, with an optimal temperature around 700°C. The SiC die can be mounted on the ceramic substrate using this borosilicate glass as an adhesive, which also protects the metal conductors on the substrate. The preferred ceramic substrate for this application is aluminum nitride (AlN), although silicon carbide/aluminum nitride or aluminum oxide can also be utilized.
Career Highlights
Throughout his career, James D Parsons has worked with several prominent organizations, including 3C Semiconductor Corporation and the Oregon Graduate Institute of Science & Technology. His expertise in semiconductor technology has made him a valuable asset in these institutions.
Collaborations
James has collaborated with notable colleagues such as B Leo Kwak and Ajay Kumar Chaddha, contributing to advancements in semiconductor research and development.
Conclusion
James D Parsons is a distinguished inventor whose work in semiconductor technology has led to significant innovations. His patents reflect a deep understanding of materials and processes that enhance the performance and reliability of semiconductor devices.