The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1997
Filed:
Jun. 07, 1995
James D Parsons, Beaverton, OR (US);
Ajay Kumar Chaddha, Portland, OR (US);
Her Song Chen, Portland, OR (US);
Jin Wu, Beaverton, OR (US);
Oregon Graduate Institute of Science and Technology, Beaverton, OR (US);
Abstract
A substrate for the growth of monocrystalline .beta.-SiC is formed by providing a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within .+-.5% of the lattice parameter of 6H.alpha.-SiC in the basal plane and growing a body of monocrystalline cubic material on the surface to provide a planar cubic material surface that is without grain boundaries, subgrain boundaries, double positioning boundaries, and pits. The cubic material, for example TiC, ZrC, HfC, or TiN, has a rock salt structure and a lattice parameter within .+-.5% of the lattice parameter of .beta.-SiC. Monocrystalline .beta.-SiC can be nucleated and grown on the surface of the cubic material.