Ajay Kumar Chaddha

Title: Ajay Kumar Chaddha: Innovator in Silicon Carbide Substrates

Introduction

Ajay Kumar Chaddha is a notable inventor based in Portland, Oregon. He has made significant contributions to the field of materials science, particularly in the development of substrates for silicon carbide growth. With two patents to his name, Chaddha's work is paving the way for advancements in semiconductor technology.

Latest Patents

Chaddha's latest patents focus on methods for creating substrates that facilitate the growth of monocrystalline beta-silicon carbide (SiC). The first patent describes a substrate formed by providing a body of monocrystalline hexagonal material with a planar surface. This surface has a lattice parameter that is within ±5% of the lattice parameter of 6H alpha-SiC in the basal plane. A body of monocrystalline cubic material is then grown on this surface, resulting in a planar cubic material surface devoid of grain boundaries, subgrain boundaries, double positioning boundaries, and pits. The cubic materials mentioned include TiC, ZrC, HfC, or TiN, all of which have a rock salt structure and a lattice parameter within ±5% of the lattice parameter of beta-SiC. This innovative approach allows for the nucleation and growth of monocrystalline beta-SiC on the cubic material surface.

Career Highlights

Chaddha is affiliated with the Oregon Graduate Institute of Science & Technology, where he continues to explore and innovate in the field of semiconductor materials. His research has implications for various applications, including electronics and optoelectronics.

Collaborations

Chaddha has worked alongside esteemed colleagues such as James D Parsons and Her Song Chen. Their collaborative efforts contribute to the advancement of research in silicon carbide and related materials.

Conclusion

Ajay Kumar Chaddha's contributions to the field of silicon carbide substrates are noteworthy and impactful. His innovative patents and collaborative work position him as a key figure in materials science.