James M Katana

Title: Innovations of James M Katana

Introduction

James M Katana is a notable inventor based in Bend, Oregon, with a remarkable portfolio of four patents. His work primarily focuses on high voltage power semiconductor devices, showcasing his expertise in the field of electrical engineering.

Latest Patents

One of his latest patents is titled "High reliability-high voltage junction termination with charge dissipation layer." This invention involves a high voltage power semiconductor device that features a junction termination structure designed to enhance reliability. The device includes a tunneling oxide layer that allows hot carriers to dissipate while mitigating stacking faults at the silicon surface. Another significant patent is the "IGBT device with platinum lifetime control and reduced gain." This invention details a substrate formed with various layers to define body and source regions, enhancing output impedance and controlling device lifetime through platinum ion implantation.

Career Highlights

Throughout his career, James has worked with prominent companies such as Advanced Power Technology Corporation and Microsemi Corporation. His contributions to these organizations have significantly advanced the development of semiconductor technologies.

Collaborations

James has collaborated with notable individuals in the industry, including Douglas A Pike, Jr. and Dah W Tsang. These partnerships have fostered innovation and the sharing of ideas within the field.

Conclusion

James M Katana's contributions to the field of semiconductor technology through his patents and collaborations highlight his significant impact as an inventor. His work continues to influence advancements in high voltage power devices.