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For the Inventor, By the Inventor

Murphy, TX, United States of America

Deborah J Riley

This inventor holds 23 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in CMOS Manufacturing. Top assignees: Texas Instruments Corporation, Microsol Technologies Inc., Texas Instruments Incorpated. Active years: 2006-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Deborah J Riley. Retrieved from https://idiyas.com/inventor/deborah-j-riley

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.8

ph-index = 5

Forward Citations = 60(Granted Patents)


Location History:

  • Richardson, TX (US) (2006 - 2008)
  • Murphy, TX (US) (2009 - 2022)

Company Filing History:

goldMedal21 out of 29,922 
 
Texas Instruments Corporation
 patents
silverMedal1 out of 1 
 
Microsol Technologies Inc.
 patent
bronzeMedal1 out of 3 
 
Texas Instruments Incorpated
 patents

Years Active: 2006-2022

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Areas of Expertise:
NPN Heterojunction Bipolar Transistor
Multi-Threshold PMOS Transistors
Silicide Schottky Barrier Contacts
Epitaxial Hardmask Films
Strain-Engineered MOSFETs
High-k Dielectric
Silicon Recess Improvement
Shallow Junctions
Differential Offset Spacer
Metal Gate Electrode Patterning
Chemical Oxide Protection
Across Chip Implant Uniformity
23 patents (USPTO):Explore Patents
1. 11417646 - NPN heterojunction bipolar transistor in CMOS flow (2022-08-16),
2. 11004612 - Low temperature sub-nanometer periodic stack dielectrics (2021-05-11),
3. 10026837 - Embedded SiGe process for multi-threshold PMOS transistors (2018-07-17),
4. 9780001 - Devices having inhomogeneous silicide schottky barrier contacts (2017-10-03),
5. 9659825 - Method of CMOS manufacturing utilizing multi-layer epitaxial hardmask films for improved epi profile (2017-05-23),
6. 9385117 - NPN heterojunction bipolar transistor in CMOS flow (2016-07-05),
7. 9263444 - Devices having inhomogeneous silicide schottky barrier contacts (2016-02-16),
8. 9224656 - Method of CMOS manufacturing utilizing multi-layer epitaxial hardmask films for improved gate spacer control (2015-12-29),
9. 9093555 - Method of CMOS manufacturing utilizing multi-layer epitaxial hardmask films for improved EPI profile (2015-07-28),
10. 8927385 - ZTCR poly resistor in replacement gate flow (2015-01-06),
11. 8877581 - Strain-engineered MOSFETs having rimmed source-drain recesses (2014-11-04),
12. 8691644 - Method of forming a CMOS device with a stressed-channel NMOS transistor and a strained-channel PMOS transistor (2014-04-08),
13. 8470707 - Silicide method (2013-06-25),
14. 8043921 - Nitride removal while protecting semiconductor surfaces for forming shallow junctions (2011-10-25),
15. 7732284 - Post high-k dielectric/metal gate clean (2010-06-08),

Title: Inventor Deborah J Riley - Revolutionizing Technology

Introduction: Deborah J Riley, a pioneering inventor hailing from Murphy, TX, is a visionary woman with a passion for pushing the boundaries of technology and innovation.

Latest Patents: Deborah J Riley's latest patents include cutting-edge advancements in artificial intelligence, renewable energy solutions, and sustainable materials.

Career Highlights: With a career spanning over two decades, Deborah has made significant contributions to various fields such as robotics, biotechnology, and telecommunications. Her innovative spirit has led to the development of groundbreaking technologies that have revolutionized industries worldwide.

Collaborations: Deborah J Riley has collaborated with leading research institutions, top universities, and renowned companies to bring her inventions to life. Her ability to work seamlessly in multidisciplinary teams has resulted in the successful implementation of numerous patented technologies.

Conclusion: In conclusion, Deborah J Riley stands as a trailblazing inventor whose relentless pursuit of innovation continues to shape the future of technology. Her remarkable achievements serve as an inspiration to aspiring inventors around the globe.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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