The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Dec. 17, 2012
Texas Instruments Incorporated, Dallas, TX (US);
Mahalingam Nandakumar, Richardson, TX (US);
Deborah J. Riley, Murphy, TX (US);
Amitabh Jain, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit having a replacement gate MOS transistor and a polysilicon resistor may be formed by removing a portion at the top surface of the polysilicon layer in the resistor area. A subsequently formed gate etch hard mask includes a MOS hard mask segment over a MOS sacrificial gate and a resistor hard mask segment over a resistor body. The resistor body is thinner than the MOS sacrificial gate. During the gate replacement process sequence, the MOS hard mask segment is removed, exposing the MOS sacrificial gate while at least a portion of the resistor hard mask segment remains over the resistor body. The MOS sacrificial gate is replaced by a replacement gate while the resistor body is not replaced.