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For the Inventor, By the Inventor

Seongnam-si, South Korea

Daeseok Byeon

USPTO Granted Patents = 73 

 

Average Co-Inventor Count = 3.3

ph-index = 6

Forward Citations = 112(Granted Patents)


Inventors with similar research interests:


Location History:

  • Hwasung-si, KR (2023)
  • Seongnam-si, KR (2015 - 2024)

Company Filing History:

goldMedal73 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2015-2025

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73 patents (USPTO):
1. 12475954 - Memory device including page buffer circuit and SSD including the memory device, and method of using the same (2025-11-18),
2. 12451192 - Non-volatile memory device with high voltage region and low voltage region (2025-10-21),
3. 12444468 - Memory device having asymmetric page buffer array architecture (2025-10-14),
4. 12431208 - Memory device detecting defect of word line path and operating method thereof (2025-09-30),
5. 12414310 - Semiconductor memory devices and method of manufacturing the same (2025-09-09),
6. 12380952 - Memory device including pass transistor circuit (2025-08-05),
7. 12354985 - Memory device including memory chip and peripheral memory chip and method of manufacturing the memory device (2025-07-08),
8. 12293791 - Memory device including pass transistor circuit (2025-05-06),
9. 12278182 - Vertical semiconductor device (2025-04-14),
10. 12249984 - Integrated circuit including power gating circuit (2025-03-11),
11. 12211830 - Integrated circuit device (2025-01-28),
12. 12205643 - Memory device having physical unclonable function and memory system including the memory device (2025-01-21),
13. 12120881 - Three-dimensional semiconductor devices (2024-10-15),
14. 12100442 - Flash memory device configured to be bonded to external semiconductor chip and computing device including flash memory device coupled to neural processor chip (2024-09-24),
15. 12062628 - Semiconductor device (2024-08-13),

Title: The Innovations of Daeseok Byeon: Pioneering Patents in Memory Technology

Introduction: Daeseok Byeon, based in Seongnam-si, South Korea, is a renowned inventor with an impressive portfolio of 63 patents. His contributions to the field of integrated circuits and memory technology have positioned him as a key figure in the advancement of electronic devices.

Latest Patents: Among his latest patents, the integrated circuit device stands out. This device features a memory that includes a memory cell insulation surrounding a memory stack and a memory cell interconnection unit. Additionally, it comprises a peripheral circuit consisting of a peripheral circuit region and interconnections between the memory structure and the peripheral circuit region. Another significant patent is for a memory device equipped with a physical unclonable function (PUF). This memory system includes a control logic circuit and employs a PUF circuit with multiple through electrodes, which facilitates the generation of PUF data based on resistance values, enhancing security in memory systems.

Career Highlights: Daeseok Byeon has primarily worked at Samsung Electronics Co., Ltd., where he has made significant strides in developing memory technology. His work has been instrumental in creating advanced integrated circuits that enhance the performance and efficiency of electronic devices, establishing his reputation as an innovative leader in the field.

Collaborations: Daeseok Byeon's collaborative efforts with fellow inventors Chanho Kim and Taehyo Kim further illustrate the importance of teamwork in driving innovation. Together, they have explored new dimensions of memory technology, contributing to various cutting-edge projects at Samsung Electronics Co., Ltd.

Conclusion: With his extensive background and experience, Daeseok Byeon continues to impact the field of integrated circuits and memory technology. His recent patents reflect the ongoing evolution of electronic devices, ensuring that his innovations will shape the future of technology for years to come.

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