The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Nov. 14, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Minjeong Heo, Suwon-si, KR;

Jaehue Shin, Suwon-si, KR;

Daeseok Byeon, Suwon-si, KR;

Yongsung Cho, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/0483 (2013.01);
Abstract

A nonvolatile memory device includes a plurality of tri-state latches, a sensing node circuit configured to electrically couple a sensing node therein to a bitline of the memory device, a transfer node circuit configured to electrically couple a transfer node therein to the plurality of tri-state latches, and a node connection circuit configured to electrically connect the transfer node to the sensing node. In addition, the transfer node circuit and the node connection circuit are collectively configured to simultaneously reflect data stored in at least two of the plurality of tri-state latches to the sensing node, in response to a dump sequence operation.


Find Patent Forward Citations

Quick Actions:

Heo, Minjeong. (2026). Nonvolatile memory devices, storage devices including the same, and methods of operating the same (U.S. Patent No. 12784838). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12784838

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