The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Feb. 01, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seungyeon Kim, Suwon-si, KR;

Daeseok Byeon, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1039 (2013.01); G11C 5/063 (2013.01); G11C 7/1069 (2013.01);
Abstract

A non-volatile memory device includes a first semiconductor layer including a first cell region in which a first memory cell array is disposed, a second cell region in which a second memory cell array is disposed, wherein the first memory cell array and the second memory cell array each include a plurality of word lines, a plurality of memory cells, and a plurality of bit lines, and a second semiconductor layer including a page buffer circuit region in which a page buffer circuit connected to the first memory cell array and the second memory cell array is disposed, wherein the page buffer circuit region overlaps a boundary region between the first cell region and the second cell region when viewed from the vertical direction.


Find Patent Forward Citations

Kim, Seungyeon. (2026). Non-volatile memory device (U.S. Patent No. 12763116). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12763116

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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