The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Apr. 26, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Gyosoo Choo, Suwon-si, KR;

Daeseok Byeon, Suwon-si, KR;

Sunghun Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 31/26 (2020.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); G01R 31/2607 (2013.01); H10B 80/00 (2023.02);
Abstract

A semiconductor device includes a semiconductor die, a detection structure, a path control circuit and a detection circuit. The semiconductor die includes a central region in which a semiconductor integrated circuit is provided and an external region surrounding the central region. The detection structure is provided in the external region. The path control circuit includes a plurality of switches that controls electrical connection of the detection structure. The detection circuit determines whether a defect is present in the semiconductor die and a location of the defect based on a difference signal. The difference signal corresponds to a difference between a forward direction test output signal and a backward direction test output signal obtained by propagating a test input signal through the detection structure in a forward direction and a backward direction, respectively, via the path control circuit.


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