Craig Moe

This inventor holds 14 USPTO granted patents and 11 published patent applications, primarily in Piezoelectric Materials. Top assignees: Akoustis, Inc., Akoustis Technologies Corp.. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Craig Moe. Retrieved from https://idiyas.com/inventor/craig-moe-uzv4d00j

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 14 (Patent Applications = 11)

% Patents Active = 85.7

Average Co-Inventor Count = 3.1

ph-index = 1

Company Filing History:

Akoustis Technologies Corp.

patents

Years Active: 2019-2026

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Areas of Expertise:

Piezoelectric Films

Epitaxial Growth

Resonator Devices

Chemical Vapor Deposition

High Electron Mobility Transistors

Group III-Nitride

Acoustic Wave Resonators

Doped Crystalline Films

Sputtering Techniques

Scandium Concentrations

Thin Film Formation

14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12622174 - Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material (2026-05-05),

2. 12597906 - Doped crystalline piezoelectric resonator films and methods of forming doped single crystalline piezoelectric resonator layers on substrates via epitaxy (2026-04-07),

3. 12549150 - Methods of forming epitaxial AlScN resonators with superlattice structures including AlGaN interlayers and varied scandium concentrations for stress control and related structures (2026-02-10),

4. 12289087 - RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer (2025-04-29),

5. 12102010 - Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices (2024-09-24),

6. 11895920 - Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material (2024-02-06),

7. 11856858 - Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films (2023-12-26),

8. 11832521 - Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers (2023-11-28),

9. 11618968 - Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers (2023-04-04),

10. 11581866 - RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same (2023-02-14),

11. 11411169 - Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material (2022-08-09),

12. 11411168 - Methods of forming group III piezoelectric thin films via sputtering (2022-08-09),

13. 11245382 - Method and structure for single crystal acoustic resonator devices using thermal recrystallization (2022-02-08),

14. 10523180 - Method and structure for single crystal acoustic resonator devices using thermal recrystallization (2019-12-31),

Title: Innovations in RF Technology: The Contributions of Craig Moe

Introduction

Craig Moe, a prominent inventor based in Penfield, NY, has made significant strides in the field of radio frequency (RF) technology. With a remarkable portfolio of 11 patents, his work focuses on the integration of advanced materials and transistor technology, heralding a new age of RF applications.

Latest Patents

Among Craig's latest innovations are groundbreaking patents, including RF acoustic wave resonators integrated with high electron mobility transistors (HEMTs). His designs incorporate a shared piezoelectric/buffer layer that enhances the performance of these devices. The RF integrated circuit device features a substrate with a HEMT device that includes a ScAlN layer, which serves as a critical buffer for confining the formation of a 2DEG (Two-Dimensional Electron Gas) channel region. Additionally, he has developed an RF piezoelectric resonator device utilizing the ScAlN layer, positioned between top and bottom electrodes, to facilitate optimal performance.

Another noteworthy invention from Craig's portfolio involves methods for forming films, which include scandium at low temperatures through chemical vapor deposition (CVD). This innovative process allows for the creation of films comprising ScAlN on substrates, critical for the advancement of both piezoelectric resonator devices and high electron mobility transistor devices.

Career Highlights

Craig Moe's career is marked by his dedication to enhancing RF technology. He has become a key player at Akoustis, Inc., where he continues to drive innovation. His work is characterized by a commitment to merging advanced materials with electronic components, leading to breakthroughs in device performance.

Collaborations

In his journey as an inventor, Craig collaborates with talented professionals like Jeffrey Blanton Shealy and Mary Winters. This collaboration fosters an environment of creativity and technological advancement, allowing them to tackle complex challenges in the field of RF technology together.

Conclusion

Craig Moe’s contributions to the field of RF technology not only reflect his innovative spirit but also his ability to harness advanced materials for enhanced electronic devices. With ongoing patents and collaboration with esteemed colleagues, his work at Akoustis, Inc. is paving the way for future advancements in technology that promise to transform various industries.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

11 patents pending: