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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12102010 B1

PDFFull Text
Date of Patent:
Sep. 24, 2024

Filed:

Mar. 05, 2021

Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices

Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventors:

Craig Moe, Penfield, NY (US);

Jeffrey M. Leathersich, Rochester, NY (US);

Assignee:

Akoustis, Inc., Huntersville, NC (US);

Attorney:
Primary Examiner:

David Vu

Assistant Examiner:

Brandon C Fox

Int. Cl.
CPC ...
H03H 3/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H10N 30/00 (2023.01); H10N 30/03 (2023.01); H10N 30/076 (2023.01); H10N 30/093 (2023.01); H10N 39/00 (2023.01);
U.S. Cl.
CPC ...
H10N 39/00 (2023.02); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H03H 3/02 (2013.01); H03H 9/02031 (2013.01); H03H 9/173 (2013.01); H03H 9/176 (2013.01); H10N 30/03 (2023.02); H10N 30/076 (2023.02); H10N 30/093 (2023.02); H10N 30/708 (2024.05); H03H 2003/021 (2013.01);
Abstract

A method of forming a film can include heating a CVD reactor chamber containing a substrate to a temperature range between about 750 degrees Centigrade and about 950 degrees Centigrade, providing a first precursor comprising Al to the CVD reactor chamber in the temperature range, providing a second precursor comprising Sc to the CVD reactor chamber in the temperature range, providing a third precursor comprising nitrogen to the CVD reactor chamber in the temperature range, and forming the film comprising ScAlN on the substrate.

Find Patent Forward Citations

Moe, Craig. (2024). Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices (U.S. Patent No. 12102010). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12102010

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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