The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

Dec. 10, 2019
Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventors:

Shawn R. Gibb, Huntersville, NC (US);

Craig Moe, Penfield, NY (US);

Jeff Leathersich, Rochester, NY (US);

Steven Denbaars, Goleta, CA (US);

Jeffrey B. Shealy, Cornelius, NC (US);

Assignee:

AKOUSTIS, INC., Huntersville, NC (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/56 (2006.01); H01L 41/253 (2013.01); H01L 41/316 (2013.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/17 (2006.01); H03H 9/13 (2006.01);
U.S. Cl.
CPC ...
H03H 9/562 (2013.01); H01L 41/253 (2013.01); H01L 41/316 (2013.01); H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/02157 (2013.01); H03H 9/0504 (2013.01); H03H 9/0523 (2013.01); H03H 9/0533 (2013.01); H03H 9/1007 (2013.01); H03H 9/174 (2013.01); H03H 9/176 (2013.01); H03H 9/13 (2013.01); H03H 2003/023 (2013.01); Y10T 29/42 (2015.01); Y10T 29/49005 (2015.01);
Abstract

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.


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