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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11832521 B1

PDFFull Text
Date of Patent:
Nov. 28, 2023

Filed:

Apr. 17, 2020

Methods of forming group iii-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers

Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventors:

Craig Moe, Penfield, NY (US);

Jeffrey M. Leathersich, Rochester, NY (US);

Assignee:

Akoustis, Inc., Huntersville, NC (US);

Attorney:

Stanek Lemon Crouse + Meeks, P.A.

Primary Examiner:

Peter Dungba Vo

Assistant Examiner:

Joshua D Anderson

Int. Cl.
CPC ...
H10N 30/074 (2023.01); H03H 3/02 (2006.01); H10N 30/079 (2023.01); H10N 30/85 (2023.01); H10N 30/076 (2023.01);
U.S. Cl.
CPC ...
H10N 30/074 (2023.02); H03H 3/02 (2013.01); H10N 30/079 (2023.02); H10N 30/85 (2023.02); H03H 2003/021 (2013.01); H03H 2003/023 (2013.01); H03H 2003/025 (2013.01); H10N 30/076 (2023.02); Y10T 29/42 (2015.01); Y10T 29/49005 (2015.01);
Abstract

A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.

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