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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11581866 B1

PDFFull Text
Date of Patent:
Feb. 14, 2023

Filed:

Aug. 11, 2020

Rf acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same

Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventors:

Jeffrey B. Shealy, Cornelius, NC (US);

Mary Winters, Webster, NY (US);

Craig Moe, Penfield, NY (US);

Assignee:

Akoustis, Inc., Huntersville, NC (US);

Attorney:

Stanek Lemon Crouse & Meeks, P.A.

Primary Examiner:

Bryan P Gordon

Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/10 (2006.01); H03H 9/05 (2006.01); H03H 9/02 (2006.01); H01L 41/337 (2013.01); H01L 41/317 (2013.01); H01L 41/29 (2013.01); H01L 41/23 (2013.01); H01L 41/18 (2006.01); H01L 41/08 (2006.01); H01L 41/053 (2006.01); H01L 41/047 (2006.01); H03H 9/54 (2006.01); H01L 41/312 (2013.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); H01L 41/0475 (2013.01); H01L 41/0477 (2013.01); H01L 41/053 (2013.01); H01L 41/081 (2013.01); H01L 41/18 (2013.01); H01L 41/23 (2013.01); H01L 41/29 (2013.01); H01L 41/317 (2013.01); H01L 41/337 (2013.01); H03H 9/02015 (2013.01); H03H 9/02118 (2013.01); H03H 9/0523 (2013.01); H03H 9/105 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/177 (2013.01); H03H 9/547 (2013.01); H01L 41/0805 (2013.01); H01L 41/312 (2013.01); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); Y10T 29/42 (2015.01);
Abstract

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

Find Patent Forward Citations

Quick Actions:

Shealy, Jeffrey. (2023). Rf acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same (U.S. Patent No. 11581866). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11581866

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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