The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
Jan. 23, 2023
Applicant:
Akoustis, Inc., Huntersville, NC (US);
Inventors:
Jeffrey B. Shealy, Cornelius, NC (US);
Mary Winters, Webster, NY (US);
Craig Moe, Penfield, NY (US);
Assignee:
Akoustis, Inc., Huntersville, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/13 (2005.12); H03H 3/02 (2005.12); H03H 9/02 (2005.12); H03H 9/05 (2005.12); H03H 9/10 (2005.12); H03H 9/17 (2005.12); H03H 9/54 (2005.12); H10N 30/00 (2022.12); H10N 30/02 (2022.12); H10N 30/06 (2022.12); H10N 30/077 (2022.12); H10N 30/086 (2022.12); H10N 30/87 (2022.12); H10N 30/88 (2022.12); H10N 30/072 (2022.12);
U.S. Cl.
CPC ...
H03H 3/02 (2012.12); H03H 9/02015 (2012.12); H03H 9/02118 (2012.12); H03H 9/0523 (2012.12); H03H 9/105 (2012.12); H03H 9/13 (2012.12); H03H 9/173 (2012.12); H03H 9/175 (2012.12); H03H 9/177 (2012.12); H03H 9/547 (2012.12); H10N 30/02 (2023.01); H10N 30/06 (2023.01); H10N 30/077 (2023.01); H10N 30/086 (2023.01); H10N 30/706 (2024.04); H10N 30/875 (2023.01); H10N 30/877 (2023.01); H10N 30/88 (2023.01); H03H 2003/021 (2012.12); H03H 2003/025 (2012.12); H10N 30/072 (2023.01); H10N 30/704 (2024.04); Y10T 29/42 (2015.01);
Abstract
An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.