The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Nov. 16, 2021
Applicant:

Akoustis Technologies Corp., Huntersville, NC (US);

Inventors:

Craig Moe, Penfield, NY (US);

Jeffrey M. Leathersich, Rochester, NY (US);

Jeffrey B. Shealy, Cornelius, NC (US);

Assignee:

Akoustis Technologies Corp., Huntersville, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/02 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/17 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02133 (2013.01); H03H 3/02 (2013.01); H03H 9/02031 (2013.01); H03H 9/0514 (2013.01); H03H 9/0533 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/176 (2013.01); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01);
Abstract

A method of forming a resonator structure can be provided by forming one or more template layers on a substrate, (a) epitaxially forming an AlScN layer on the template layer to a first thickness, (b) epitaxially forming an AlGaN interlayer on the AlScN layer to a second thickness that is substantially less than the first thickness, and repeating operations (a) and (b) until a total thickness of all AlScN layers and AlGaN interlayers provides a target thickness for a single crystal AlScN/AlGaN superlattice resonator structure on the template layer.


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