The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Aug. 02, 2019
Applicant:
Akoustis, Inc., Huntersville, NC (US);
Inventors:
Craig Moe, Penfield, NY (US);
Jeffrey M. Leathersich, Rochester, NY (US);
Arthur E. Geiss, Greensboro, NC (US);
Assignee:
Akoustis, Inc., Huntersville, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 30/076 (2023.01); C23C 14/02 (2006.01); H03H 3/02 (2006.01); C23C 14/34 (2006.01); H01J 37/34 (2006.01); C23C 14/06 (2006.01); H10N 30/88 (2023.01); H10N 30/853 (2023.01); H03H 9/56 (2006.01); H03H 9/02 (2006.01);
U.S. Cl.
CPC ...
H10N 30/076 (2023.02); C23C 14/02 (2013.01); C23C 14/0617 (2013.01); C23C 14/34 (2013.01); H01J 37/3426 (2013.01); H03H 3/02 (2013.01); H10N 30/853 (2023.02); H10N 30/88 (2023.02); H01J 2237/332 (2013.01); H03H 9/02015 (2013.01); H03H 9/562 (2013.01); H03H 2003/023 (2013.01);
Abstract
A method of forming a piezoelectric film can include providing a wafer in a CVD reaction chamber and forming an aluminum nitride material on the wafer, the aluminum nitride material doped with a first element E1 selected from group IIA or from group IIB and doped with a second element E2 selected from group IVB to provide the aluminum nitride material comprising a crystallinity of less than about 1.5 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).