The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Jul. 16, 2019
Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventors:

Craig Moe, Penfield, NY (US);

Jeffrey B. Shealy, Cornelius, NC (US);

Mary Winters, Webster, NY (US);

Assignee:

Akoustis, Inc., Huntersville, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/316 (2013.01); H03H 3/02 (2006.01); H01L 41/187 (2006.01); H01L 41/053 (2006.01); H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/06 (2006.01); C23C 14/02 (2006.01); H03H 9/56 (2006.01); H01L 41/319 (2013.01);
U.S. Cl.
CPC ...
H01L 41/316 (2013.01); C23C 14/02 (2013.01); C23C 14/0617 (2013.01); C23C 14/34 (2013.01); H01J 37/3426 (2013.01); H01L 41/053 (2013.01); H01L 41/187 (2013.01); H03H 3/02 (2013.01); H01J 2237/332 (2013.01); H01L 41/319 (2013.01); H03H 9/562 (2013.01); H03H 2003/023 (2013.01); Y10T 29/42 (2015.01); Y10T 29/49005 (2015.01);
Abstract

A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).


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