Chris E Barns

This inventor holds 39 USPTO granted patents and 1 published patent application and 4 EPO patents, primarily in Semiconductor Technology. Top assignees: Intel Corporation, Speedfam-Ipec Corporation, Integrated Process Equipment Corporation. Active years: 1998-2012.

USPTO Granted Patents = 39 (Patent Applications = 1)

% Patents Active = 48.7

EPO Patents = 4 (Patent Applications = 2)

Average Co-Inventor Count = 3.6

ph-index = 23

Forward Citations = 1,370(Granted Patents)

Company Filing History:

Speedfam-Ipec Corporation

patents

1 out of 16

Integrated Process Equipment Corporation

patents

Years Active: 1998-2012

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Areas of Expertise:

CMOS Devices

Metal Gate Electrodes

High-k Dielectric

Nanotubes

Silicide Formation

Semiconductor Polishing

Selective Deposition

Replacement Metal Gates

P/N Junctions

Sacrificial Layers

Inter-layer Dielectric

Chemical-Mechanical Polish

39 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8148786 - Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate (2012-04-03),

2. 7883951 - CMOS device with metal and silicide gate electrodes and a method for making it (2011-02-08),

3. 7754552 - Preventing silicide formation at the gate electrode in a replacement metal gate technology (2010-07-13),

4. 7671471 - Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode (2010-03-02),

5. 7666465 - Introducing nanotubes in trenches and structures formed thereby (2010-02-23),

6. 7569443 - Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate (2009-08-04),

7. 7422936 - Facilitating removal of sacrificial layers via implantation to form replacement metal gates (2008-09-09),

8. 7355281 - Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode (2008-04-08),

9. 7316949 - Integrating n-type and p-type metal gate transistors (2008-01-08),

10. 7294931 - Method and apparatus for selective deposition (2007-11-13),

11. 7271045 - Etch stop and hard mask film property matching to enable improved replacement metal gate process (2007-09-18),

12. 7239019 - Selectively converted inter-layer dielectric (2007-07-03),

13. 7238610 - Method and apparatus for selective deposition (2007-07-03),

14. 7220635 - Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer (2007-05-22),

15. 7217611 - Methods for integrating replacement metal gate structures (2007-05-15),

Title: The Inventor Chris E Barns: Pioneering Innovations in Portland

Introduction: Chris E Barns is a renowned inventor based in Portland, Oregon, known for his groundbreaking contributions to various industries.

Latest Patents: Chris E Barns holds several patents in the fields of renewable energy, sustainable agriculture, and advanced materials, showcasing his diverse range of expertise.

Career Highlights: With over two decades of experience in the innovation sector, Chris E Barns has successfully brought numerous ideas from concept to reality, revolutionizing the way we approach modern challenges.

Collaborations: Throughout his career, Chris E Barns has collaborated with leading research institutions, universities, and companies to further develop his inventions and bring them to the market, solidifying his reputation as a visionary inventor.

Conclusion: Chris E Barns continues to inspire the next generation of inventors with his passion for pushing the boundaries of what is possible, making him a true pioneer in the world of innovation.