The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Nov. 02, 2006
Justin K. Brask, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Jack Kavalieros, Portland, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Chris E. Barns, Portland, OR (US);
Uday Shah, Portland, OR (US);
Suman Datta, Beaverton, OR (US);
Christopher D. Thomas, Aloha, OR (US);
Robert S. Chau, Beaverton, OR (US);
Justin K. Brask, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Jack Kavalieros, Portland, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Chris E. Barns, Portland, OR (US);
Uday Shah, Portland, OR (US);
Suman Datta, Beaverton, OR (US);
Christopher D. Thomas, Aloha, OR (US);
Robert S. Chau, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.