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Company Filing History:
185 out of 54,664 
1 out of 82 
1 out of 832,680 Years Active: 2003-2024
Title: Justin K Brask: A Prominent Inventor Shaping Semiconductor Technologies
Introduction:
In the realm of semiconductor device manufacturing, Justin K Brask has made a significant impact with his extensive patent portfolio and groundbreaking inventions. Hailing from Portland, Oregon, Brask has established himself as a notable figure in the industry with a remarkable track record of 186 patents. This article delves into Brask's latest patents, career highlights, collaborations, and overall contributions to the field.
Latest Patents:
One of Brask's recent patents is the invention of a gate electrode with a capping layer, presenting a novel method for manufacturing a semiconductor device. This innovative approach involves sputtering a capping layer in-situ on a gate dielectric layer before subjecting it to high-temperature processing, effectively filling any vacancies in the gate dielectric layer with capping material. This technique holds immense potential for improving the performance and longevity of semiconductor devices.
Additionally, Brask's patent for fabricating a transistor with a thinned channel region has garnered attention. This method involves etching the channel region following the removal of a dummy gate, enabling the source and drain regions to have relatively low resistance. This breakthrough not only ensures enhanced conductivity but also offers promising avenues for improving overall transistor performance.
Career Highlights:
With an impressive professional journey, Justin K Brask has worked with renowned companies, including Intel Corporation. His contributions to the field have garnered recognition and earned him a reputation as an accomplished inventor and expert in semiconductor technologies.
Collaborations:
Collaborating with esteemed colleagues has long been a part of Brask's career. Notably, he has worked alongside Robert S Chau and Mark L Doczy, distinguished professionals renowned for their contributions to the industry. Through these fruitful collaborations, Brask has been able to combine expertise, innovations, and diverse perspectives to push the boundaries of semiconductor technology.
Conclusion:
Justin K Brask's contributions to the field of semiconductor device manufacturing have solidified his status as a prominent inventor. With a multitude of patents and groundbreaking inventions, Brask continues to shape the trajectory of the industry. His patents, such as the gate electrode with a capping layer and the method for fabricating a transistor with a thinned channel, showcase his innovative thinking and commitment to technological advancements. As Brask's career progresses, it will undoubtedly be exciting to see the further impact he will have on the semiconductor world.
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