The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Aug. 25, 2004
Chris E. Barns, Portland, OR (US);
Matt Prince, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Justin K. Brask, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Chris E. Barns, Portland, OR (US);
Matt Prince, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Justin K. Brask, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Replacement metal gates may be formed by removing a polysilicon layer from a gate structure. The gate structure may be formed by patterning the polysilicon layer and depositing a spacer layer over the gate structure such that the spacer layer has a first polish rate. The spacer layer is then etched to form a sidewall spacer. An interlayer dielectric is applied over the gate structure with the sidewall spacer. The interlayer dielectric has a second polish rate higher than the first polish rate. A hard mask may also be applied over the gate structure and implanted so that the hard mask may be more readily removed.