The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2008

Filed:

Oct. 11, 2005
Applicants:

Mark Doczy, Beaverton, OR (US);

Justin K. Brask, Portland, OR (US);

Steven J. Keating, Beaverton, OR (US);

Chris E. Barns, Portland, OR (US);

Brian S. Doyle, Portland, OR (US);

Michael L. Mcswiney, Hillsboro, OR (US);

Jack T. Kavalieros, Portland, OR (US);

John P. Barnak, Beaverton, OR (US);

Inventors:

Mark Doczy, Beaverton, OR (US);

Justin K. Brask, Portland, OR (US);

Steven J. Keating, Beaverton, OR (US);

Chris E. Barns, Portland, OR (US);

Brian S. Doyle, Portland, OR (US);

Michael L. McSwiney, Hillsboro, OR (US);

Jack T. Kavalieros, Portland, OR (US);

John P. Barnak, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.


Find Patent Forward Citations

Loading…