Michael L McSwiney

Title: **Michael L McSwiney: An Innovator in Metal Structures and Semiconductor Technologies**

Introduction

Michael L McSwiney is an accomplished inventor based in Hillsboro, Oregon, with a remarkable portfolio of 22 patents. His innovative work primarily focuses on advancing metal structures and semiconductor devices, showcasing his significant contributions to the technology field.

Latest Patents

Among his latest patents, Michael has developed advanced metal structures that incorporate cobalt and nickel alloys. These innovations involve processes such as chemical vapor deposition (CVD), which allows for the formation of these metal structures while utilizing trace amounts of precursor materials. Additionally, he has patented semiconductor devices featuring ruthenium phosphorus thin films. This technology is crucial for the development of transistor devices and interconnect structures, with the deposition processes potentially utilizing phosphorus-based compounds as co-reactants.

Career Highlights

Michael's career is highlighted by his tenure at renowned companies, including Intel Corporation and Micron Technology Incorporated. His experience in these leading technology firms has honed his expertise in the fields of semiconductor technology and materials science.

Collaborations

Throughout his career, Michael has collaborated with various talented professionals, including Michael D Goodner and Robert P Meagley. These partnerships have facilitated the sharing of knowledge and skills, further enhancing the quality and impact of his inventions.

Conclusion

Michael L McSwiney continues to influence the landscape of technology with his innovative approaches to metal structures and semiconductor devices. His impressive patent portfolio reflects his dedication to advancing scientific and engineering practices, solidifying his status as a noteworthy inventor in his field.