The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2011

Filed:

Sep. 30, 2004
Applicants:

Robert P. Meagley, Emeryville, CA (US);

Michael D. Goodner, Hillsboro, OR (US);

Bob E. Leet, Scottsdale, AZ (US);

Michael L. Mcswiney, Hillsboro, OR (US);

Inventors:

Robert P. Meagley, Emeryville, CA (US);

Michael D. Goodner, Hillsboro, OR (US);

Bob E. Leet, Scottsdale, AZ (US);

Michael L. McSwiney, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/004 (2006.01); G03F 7/029 (2006.01); G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.


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