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For the Inventor, By the Inventor

Hsinchu, Taiwan

Chin-Yi Huang

This inventor holds 30 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Macronix International Co., Ltd.. Active years: 1997-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chin-Yi Huang. Retrieved from https://idiyas.com/inventor/chin-yi-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30

% Patents Active = 86.7


Average Co-Inventor Count = 3.3

ph-index = 9

Forward Citations = 471(Granted Patents)


Location History:

  • Pao Shan, TW (2001 - 2003)
  • Hsin-Chu Hsien, TW (2001 - 2003)
  • Hsinchu County, TW (2002 - 2004)
  • Hsinchu, TW (1997 - 2024)

Company Filing History:

goldMedal19 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal11 out of 3,609 
 
Macronix International Co., Ltd.
 patents

Years Active: 1997-2025

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Areas of Expertise:
Semiconductor Device
Power MOSFET
Flash Memory
Non-Volatile Memory
LDMOS Transistor
MRAM Algorithm
Floating Gate
3D Polysilicon Layer
Shallow Trench Isolation
EEPROM Structure
Contact Formation
Memory Cell Design
30 patents (USPTO):Explore Patents
1. 12513947 - Semiconductor device and method of formation (2025-12-30),
2. 12021155 - Semiconductor device and method of formation (2024-06-25),
3. 11411123 - Semiconductor device and method of formation (2022-08-09),
4. 11289599 - Power metal-oxide-semiconductor field effect transistor (2022-03-29),
5. 11158546 - Semiconductor arrangement and method of forming (2021-10-26),
6. 10680101 - Power metal-oxide-semiconductor field-effect transistor (2020-06-09),
7. 10490460 - Semiconductor arrangement and method of forming (2019-11-26),
8. 10068773 - Contact formation for split gate flash memory (2018-09-04),
9. 10050047 - Method to improve floating gate uniformity for non-volatile memory device (2018-08-14),
10. 9865610 - Si recess method in HKMG replacement gate technology (2018-01-09),
11. 9837322 - Semiconductor arrangement and method of forming (2017-12-05),
12. 9768293 - Laterally diffused metal-oxide-semiconductor (LDMOS) transistor with a vertical channel region (2017-09-19),
13. 9747159 - MRAM smart bit write algorithm with error correction parity bits (2017-08-29),
14. 9627392 - Method to improve floating gate uniformity for non-volatile memory devices (2017-04-18),
15. 9583591 - Si recess method in HKMG replacement gate technology (2017-02-28),

Title: Inventor Chin-Yi Huang

Introduction: Chin-Yi Huang is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Chin-Yi Huang holds several patents in the areas of semiconductor technology, renewable energy, and telecommunications, showcasing his innovative spirit and expertise in these domains.

Career Highlights: With a career spanning over two decades, Chin-Yi Huang has worked with leading research institutions and technology companies, playing a pivotal role in developing cutting-edge solutions that have revolutionized the industry.

Collaborations: Throughout his career, Chin-Yi Huang has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to the creation of impactful inventions.

Conclusion: Chin-Yi Huang's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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