The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jul. 29, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Chin-Yi Huang, Hsinchu, TW;
Wade Shih, Nantou County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); G11C 8/14 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); G11C 8/14 (2013.01); H01L 29/40114 (2019.08); H01L 29/402 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02);
Abstract
A semiconductor device includes a channel region between a source region and a drain region, a gate over the channel region, a dielectric layer over the gate, a capacitive field plate over the dielectric layer, and a word line electrically coupled to the capacitive field plate.