The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Mar. 14, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Harry-Hak-Lay Chuang, Zhubei, TW;
Wei Cheng Wu, Zhubei, TW;
Chin-Yi Huang, Hsinchu, TW;
Shih-Chang Liu, Alian Township, TW;
Chang-Ming Wu, New Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/77 (2006.01); H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 27/11534 (2013.01);
Abstract
The present disclosure relates to a method of embedding an ESF3 memory in a HKMG integrated circuit that utilizes a replacement gate technology. The ESF3 memory is formed over a recessed substrate which prevents damage of the memory control gates during the CMP process performed on the ILD layer. An asymmetric isolation zone is also formed in the transition region between the memory cell and the periphery circuit boundary.