The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Jan. 30, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 21/3213 (2006.01); H01L 21/321 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/28 (2006.01); H01L 27/11521 (2017.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/28273 (2013.01); H01L 21/76229 (2013.01); H01L 29/0649 (2013.01); H01L 29/66825 (2013.01); H01L 21/3212 (2013.01);
Abstract
The present disclosure relates an integrated circuit (IC) for an embedded flash memory device. In some embodiments, the IC includes a memory array region and a boundary region surrounding the memory array region disposed over a semiconductor substrate. A hard mask is disposed at the memory array region comprising a plurality of discrete portions. The hard mask is disposed under a control dielectric layer of the memory array region.