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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10068773 B1

PDFFull Text
Date of Patent:
Sep. 04, 2018

Filed:

May. 31, 2016

Contact formation for split gate flash memory

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Harry-Hak-Lay Chuang, Singapore, SG;

Wei-Cheng Wu, Zhubei, TW;

Ya-Chen Kao, Fuxing Township, TW;

Chin-Yi Huang, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Eric Ward

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/792 (2006.01); H01L 21/285 (2006.01); H01L 29/423 (2006.01); H01L 27/11521 (2017.01); H01L 27/11546 (2017.01); H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); H01L 29/788 (2006.01); H01L 21/8238 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/28008 (2013.01); H01L 21/28088 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 21/823842 (2013.01); H01L 27/11521 (2013.01); H01L 27/11546 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/42328 (2013.01); H01L 29/42344 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01);
Abstract

An integrated circuit structure includes a plurality of flash memory cells forming a memory array, wherein each of the plurality of flash memory cells includes a select gate and a memory gate. A select gate electrode includes a first portion including polysilicon, wherein the first portion forms select gates of a column of the memory array, and a second portion electrically connected to the first portion, wherein the second portion includes a metal. A memory gate electrode has a portion forming memory gates of the column of the memory array.

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